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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs : 25.5 nC @ 10 V
Product Status : Active
Mounting Type : Through Hole
Package : Bulk
Input Capacitance (Ciss) (Max) @ Vds : 1190 pF @ 100 V
Series : CoolMOS P6™
Vgs (Max) : ±20V
Vgs(th) (Max) @ Id : 4.5V @ 430µA
Supplier Device Package : PG-TO220-3-111
Rds On (Max) @ Id, Vgs : 280mOhm @ 5.2A, 10V
Mfr : Infineon Technologies
Operating Temperature : -55°C ~ 150°C (TJ)
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Power Dissipation (Max) : 32W (Tc)
Package / Case : TO-220-3 Full Pack
Drain to Source Voltage (Vdss) : 600 V
Current - Continuous Drain (Id) @ 25°C : 13.8A (Tc)
Technology : MOSFET (Metal Oxide)
FET Feature : -
Description : 600V, N-CHANNEL POWER MOSFET
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