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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 6V @ 1mA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-220-3
Gate Charge (Qg) (Max) @ Vgs : 47 nC @ 10 V
Rds On (Max) @ Id, Vgs : 1.9Ohm @ 3.5A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 1000 V
Vgs (Max) : ±30V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 2590 pF @ 25 V
Mounting Type : Through Hole
Series : HiPerFET™, Polar
Supplier Device Package : TO-220-3
Mfr : IXYS
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Power Dissipation (Max) : 300W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IXFP7N100
Description : MOSFET N-CH 1000V 7A TO220AB
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IXFP7N100P Images |
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