Sign In | Join Free | My polstate.com |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 250µA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-220-3
Gate Charge (Qg) (Max) @ Vgs : 112 nC @ 10 V
Rds On (Max) @ Id, Vgs : 10mOhm @ 42.5A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 60 V
Vgs (Max) : ±25V
Product Status : Obsolete
Input Capacitance (Ciss) (Max) @ Vds : 4120 pF @ 25 V
Mounting Type : Through Hole
Series : QFET®
Supplier Device Package : TO-220-3
Mfr : onsemi
Current - Continuous Drain (Id) @ 25°C : 85A (Tc)
Power Dissipation (Max) : 160W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : FQP85
Description : MOSFET N-CH 60V 85A TO220-3
![]() |
FQP85N06 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.