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IPP65R190CFD

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IPP65R190CFD

Transistor Polarity : N-Channel

Technology : Si

Product Category : MOSFET

Mounting Style : Through Hole

Tradename : CoolMOS

Package / Case : TO-220-3

Vds - Drain-Source Breakdown Voltage : 650 V

Packaging : Tube

Vgs th - Gate-Source Threshold Voltage : 4 V

Id - Continuous Drain Current : 17.5 A

Rds On - Drain-Source Resistance : 190 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 30 V

Qg - Gate Charge : 68 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2

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The IPP65R190CFD,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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