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Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : Through Hole
Tradename : CoolMOS
Package / Case : TO-220-3
Vds - Drain-Source Breakdown Voltage : 650 V
Packaging : Tube
Vgs th - Gate-Source Threshold Voltage : 4 V
Id - Continuous Drain Current : 17.5 A
Rds On - Drain-Source Resistance : 190 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 30 V
Qg - Gate Charge : 68 nC
Manufacturer : Infineon Technologies
Description : MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
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