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DMN61D9UW-7

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DMN61D9UW-7

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 340 mA

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : SOT-323-3

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 500 mV

Product Category : MOSFET

Rds On - Drain-Source Resistance : 1.2 Ohms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 400 pC

Manufacturer : Diodes Incorporated

Description : MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A

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The DMN61D9UW-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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