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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 17.1 dB
Transistor Type : HEMT
Pd - Power Dissipation : 15.3 W
Package / Case : QFN-EP-16
Output Power : 11 W
Vds - Drain-Source Breakdown Voltage : 32 V
Packaging : Tray
Id - Continuous Drain Current : 557 mA
Vgs - Gate-Source Breakdown Voltage : - 2.7 V
Manufacturer : Qorvo
Description : RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
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