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Gate-Emitter Leakage Current : 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 170 A
Pd - Power Dissipation : 830 W
Collector- Emitter Voltage VCEO Max : 1.7 kV
Package / Case : TO-264-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : IXYS
Description : IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A
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IXGK100N170 Images |
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