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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 230 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : +/- 20
Collector-Emitter Saturation Voltage : 1.35 V
Manufacturer : Infineon Technologies
Description : IGBT Transistors Trenchstop 5 IGBT
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