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IXXH50N60C3D1

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IXXH50N60C3D1

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Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 100 A

Pd - Power Dissipation : 600 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247AD

Maximum Operating Temperature : + 150 C

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 2.3 V

Manufacturer : IXYS

Description : IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked

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The IXXH50N60C3D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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