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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 600 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247AD
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Manufacturer : IXYS
Description : IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
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