Sign In | Join Free | My polstate.com |
|
Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 116 A
Pd - Power Dissipation : 380 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : TO-247AD-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.7 V
Manufacturer : IXYS
![]() |
IXXH60N65B4H1 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.