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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 64 A
Pd - Power Dissipation : 480 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : 30 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 4.8 V
Manufacturer : IXYS
Description : IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
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IXYH40N120C3D1 Images |
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